| Autor: |
Ligeon, M., Muller, F., Herino, R., Gaspard, F., Halimaoui, A., Bomchil, G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1989, Vol. 66 Issue 8, p3814, 6p, 9 Graphs |
| Abstrakt: |
Presents a study that proposed a type of application of porous silicon formation. Discussion on the anodization of uniformly p-doped silicon semiconductors; Information on impurity profiling in p-type silicon semiconductors; Characterization of the selectivity of porous silicon formation on p-type silicon. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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