Stabilization and removal of the native oxides at the surface of (100)InP by low-pressure exposure to NH3.
| Autor: | Moison, J. M., Nissim, Y. I., Licoppe, C. |
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| Zdroj: | Journal of Applied Physics; 10/15/1989, Vol. 66 Issue 8, p3824, 7p, 7 Graphs |
| Abstrakt: | Presents a study that analyzed the complete reduction of oxides at the surface of indium phosphide semiconductors. Methodology; Examination of the properties of the surface of semiconductors at the completion of the reduction process; Evaluation of the indium/phosphorus surface stoichiometry. |
| Databáze: | Complementary Index |
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