Molecular-beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxide.
| Autor: | Das, K., Humphreys, T. P., Posthill, J. B., Tarn, J. C. L., Wortman, J. J., Parikh, N. R. |
|---|---|
| Předmět: | |
| Zdroj: | Journal of Applied Physics; 10/15/1988, Vol. 64 Issue 8, p3934, 4p, 4 Diagrams, 1 Graph |
| Abstrakt: | Presents a study that demonstrated the direct growth of gallium arsenide by molecular beam epitaxy on nominally-oriented silicon with a buried implanted oxide. Experimental procedure; Results; Discussion. |
| Databáze: | Complementary Index |
| Externí odkaz: |
|