| Autor: |
Singh, S., Baiocchi, F., Butherus, A. D., Grodkiewicz, W. H., Schwartz, B., Van Uitert, L. G., Yesis, L., Zydzik, G. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1988, Vol. 64 Issue 8, p4194, 5p |
| Abstrakt: |
Presents information on a study which investigated electron-beam deposited films of phosphosilicate as dielectrics for the encapsulation of silicon-implanted gallium arsenide (GaAs) for the purpose of post-implant annealing. Information on the post-implant annealing in flowing N[sub2] and forming gas mixture; Factors that influence the carrier concentration profiles and doping efficiencies of ion implanted GaAs; Optimization of deposition temperature. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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