| Autor: |
Willems, G. J., Poortmans, J. J., Maes, H. E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1987, Vol. 62 Issue 8, p3408, 8p, 3 Diagrams, 1 Chart, 4 Graphs |
| Abstrakt: |
Focuses on a semiempirical model which describes the amount of silicon (Si) that is molten in laser recrystallization of polycrystalline Si layers. Influence of laser power, scan velocity, preheating temperature and capping layer structure; Problem regarding the computation of the temperature profile in a solid; Relation between the amount of laser-induced melting and the process parameters of the recrystallization of Si layers in three-dimensional silicon layers on insulator structures. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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