Angular dispersion of ‘‘backward’’ Raman scattering: Absorbing III-V semiconductors (GaAs).

Autor: Anastassiadou, A., Raptis, Y. S., Anastassakis, E.
Předmět:
Zdroj: Journal of Applied Physics; 10/15/1986, Vol. 60 Issue 8, p2924, 8p
Abstrakt: Deals with the problem of nearly backward scattering from absorbing noncentrosymmetric cubic materials of III-V zinc-blende type. Scattering kinematics at the site of an elementary scattering volume; Variables external geometries for the incident and scattered light; Information on Faust-Henry coefficient.
Databáze: Complementary Index