Silicon-to-silicon direct bonding method.

Autor: Shimbo, M., Furukawa, K., Fukuda, K., Tanzawa, K.
Předmět:
Zdroj: Journal of Applied Physics; 10/15/1986, Vol. 60 Issue 8, p2987, 3p
Abstrakt: Discusses the occurrence of strong bonding when a pair of clean, mirror-polished silicon surfaces are contacted at room temperature after hydrophilic surface formation. Application of thermic infrared rays transmitted through the bonded wafer for imaging voids; Evaluation of electric resistance for the bonded wafer; Fracture strength for the bonded silicon in relation to heating temperature.
Databáze: Complementary Index