| Autor: |
Maddalon-Vinante, C., Barbier, D., Erramli, H., Blondiaux, G. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 11/15/1993, Vol. 74 Issue 10, p6115, 5p, 4 Graphs |
| Abstrakt: |
Presents a study which examined the oxygen outdiffusion from Czochralski silicon under oxygen, nitrogen, argon and hydrogen atmospheres. Characteristics of oxygen outdiffusion in Czochralski-silicon wafers; Materials and methods; Description of oxygen in a sample submitted to the classical outdiffusion treatment; Description of the sample annealed in a hydrogenated ambient. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
