Emissivity of silicon at elevated temperatures.

Autor: Timans, P. J.
Předmět:
Zdroj: Journal of Applied Physics; 11/15/1993, Vol. 74 Issue 10, p6353, 12p, 16 Graphs
Abstrakt: Presents a study which experimentally determined the temperature dependences of the spectral and total hemispherical emissivities of silicon by using a technique combining isothermal electron beam heating with in situ optical measurements. Discussion on the development of rapid thermal processing; Details of an experiment on silicon; Description of the reflection spectra of the silicon samples.
Databáze: Complementary Index