| Autor: |
Slijkerman, W. F. J., Gay, J. M., Zagwijn, P. M., van der Veen, J. F., Macdonald, J. E., Williams, A. A., Gravesteijn, D. J., van de Walle, G. F. A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/15/1990, Vol. 68 Issue 10, p5105, 4p |
| Abstrakt: |
Focuses on a study which presented x-ray reflectivity measurements on silicon (001) crystals containing a delta-doping layer of antimony atoms a few nanometers below the surface. Information on the doping profile of antimony; Characteristic decay length of antimony. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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