| Autor: |
Kallergi, M., Aubel, J., Sundaram, S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/15/1989, Vol. 66 Issue 10, p4862, 4p |
| Abstrakt: |
Deals with a study which examined the nature of the strain in epitaxial layers of gallium arsenide grown by laser-assisted metalorganic chemical vapor deposition on silicon substrate, using the electrolyte electroreflectance technique. Information on heteroepitaxy of gallium arsenide films; Methodology of the study; Results and discussion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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