Exciton line broadening in ZnSxSe1-x epilayers grown on GaAs by molecular-beam epitaxy.

Autor:	Newbury, P. R., Shahzad, K., Petruzzello, J., Cammack, D. A.
Předmět:	SEMICONDUCTORS ALLOYS GALLIUM arsenide MOLECULAR beam epitaxy PHOTOLUMINESCENCE
Zdroj:	Journal of Applied Physics; 11/15/1989, Vol. 66 Issue 10, p4950, 8p
Abstrakt:	Deals with a study which examined the semiconducting alloy epilayers grown on gallium arsenide substrates by molecular-beam epitaxy for exciton line broadening in photoluminescence. Discussion on exciton photoluminescence; Methodology of the study; Results and discussion.
Databáze:	Complementary Index
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