Hot-electron properties of GaAs planar-doped barrier diodes.
| Autor: | Couch, N. R., Kearney, M. J. |
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| Zdroj: | Journal of Applied Physics; 11/15/1989, Vol. 66 Issue 10, p5083, 3p |
| Abstrakt: | Focuses on a study which examined the hot-electron effect in various designs of gallium arsenide planar-doped barrier diodes under high bias. Information on planar-doped barrier; Methodology of the study; Results and discussion. |
| Databáze: | Complementary Index |
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