| Autor: |
Kavanagh, K. L., Capano, M. A., Hobbs, L. W., Barbour, J. C., Marée, P. M. J., Schaff, W., Mayer, J. W., Pettit, D., Woodall, J. M., Stroscio, J. A., Feenstra, R. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/15/1988, Vol. 64 Issue 10, p4843, 10p, 5 Black and White Photographs, 1 Diagram, 4 Charts, 5 Graphs |
| Abstrakt: |
Focuses on a study which investigated the dislocation densities, surface morphology, and strain of gallium indium arsenide/gallium arsenide epitaxial interfaces as a function of indium composition and layer thickness. Findings from transmission electron microscopy; Amplitude of surface corrugations; Results of double-crystal x-ray diffractometry. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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