| Autor: |
Rudder, R. A., Fountain, G. G., Markunas, R. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/15/1986, Vol. 60 Issue 10, p3519, 4p, 2 Black and White Photographs, 1 Diagram |
| Abstrakt: |
Presents a study that deposited epitaxial germanium (Ge) films using a remote plasma-enhanced chemical-vapor deposition technique where metastable helium atoms flow downstream from the plasma region to dissociate Ge-hydrogen molecules into deposition precursor species. Temperature by which Ge films have been deposited; Demonstration of Ge epitaxy on Ge, silicon and gallium-arsenic face substrates; Importance of an in situ cleaning process that involves a moderate thermal bake. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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