| Autor: |
Luquet, H., Gouskov, L., Perotin, M., Jean, A., Rjeb, A., Zarouri, T., Bougnot, G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/15/1986, Vol. 60 Issue 10, p3582, 10p, 2 Black and White Photographs, 2 Diagrams, 4 Charts, 17 Graphs |
| Abstrakt: |
Presents a study that grew gallium-aluminum-tin layers by liquid-phase epitaxy on gallium-tin substrates. Temperature range by which the layers were grown; Temperature that will lead to the best control of the layer's quality; Factor that limits the natural p-type doping of the layers. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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