The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition.

Autor:	Wickenden, A. Estes, Wickenden, D. K., Kistenmacher, T. J.
Předmět:	MATERIALS at high temperatures GALLIUM nitride NUCLEATION CHEMICAL vapor deposition
Zdroj:	Journal of Applied Physics; 5/15/1994, Vol. 75 Issue 10, p5367, 5p, 7 Graphs
Abstrakt:	Presents a study which examined the effects of thermal annealing on gallium nitride nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition. Background on the sample materials; Experimental details; Results and discussion.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu