| Autor: |
Pietsch, G. J., Köhler, U., Henzler, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/1993, Vol. 73 Issue 10, p4797, 11p |
| Abstrakt: |
Presents information on a study which discussed results obtained with scanning tunneling microscopy on silicon after treatment with various hydrofluoric acid (HF) solutions. Spectroscopical methods used to investigate the chemical state of the surface after HF treatment; Description of the ultrahigh-vacuum system; Investigation of oxide removal versus preferential attack of silicon; Dependence of the surface morphology on the initial atomic step structure induced by an intentional sample. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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