Spin-dependent transport at silicon grain boundaries.

Autor: Seager, C. H., Venturini, E. L., Schubert, W. K.
Předmět:
Zdroj: Journal of Applied Physics; 5/15/1992, Vol. 71 Issue 10, p5059, 11p
Abstrakt: Deals with a study which measured the transport of electronic carriers across grain boundaries in n- and p-type silicon as a function of magnetic field in the presence of a microwave field. Experimental details; Results and discussion; Conclusion.
Databáze: Complementary Index