Optimized selective mixing of a GaAs/GaAlAs quantum well for the fabrication of quantum wires.

Autor: Vieu, C., Schneider, M., Benassayag, G., Planel, R., Birotheau, L., Marzin, J. Y., Descouts, B.
Předmět:
Zdroj: Journal of Applied Physics; 5/15/1992, Vol. 71 Issue 10, p5012, 4p
Abstrakt: Describes a structure for a GaAs/(Ga, Al)As quantum well (QW). Data on the backscattered electron image taken from the surface of an array of interdiffused wires; Information on the low-temperature photoluminescence spectra of QW wires for different widths of the implantation masks.
Databáze: Complementary Index