Microstructural studies of epitaxial Ge films grown on [100] GaAs by laser photochemical vapor deposition.
| Autor: | Kiely, C. J., Tavitian, V., Eden, J. G. |
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| Zdroj: | Journal of Applied Physics; 5/15/1989, Vol. 65 Issue 10, p3883, 13p, 20 Black and White Photographs, 1 Diagram, 1 Graph |
| Abstrakt: | Presents a study which examined germanium films grown on gallium arsenide by laser photochemical vapor deposition in parallel geometry. Experimental details; Results and discussion; Conclusion. |
| Databáze: | Complementary Index |
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