Photoluminescence characterization of ZnSe doped with Ga by bulk and planar doping techniques in molecular-beam epitaxy.
| Autor: | Skromme, B. J., Shibli, S. M., de Miguel, J. L., Tamargo, M. C. |
|---|---|
| Předmět: | |
| Zdroj: | Journal of Applied Physics; 5/15/1989, Vol. 65 Issue 10, p3999, 7p, 2 Charts, 7 Graphs |
| Abstrakt: | Presents a study which compared the photoluminescence properties of conventionally gallium-doped molecular beam epitaxy zinc selenide with those of planar gallium-doped samples. Experimental details; Results; Discussion; Conclusions. |
| Databáze: | Complementary Index |
| Externí odkaz: |
|