| Autor: |
Oe, Kunishige, Tsubaki, Kotaro |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/1986, Vol. 59 Issue 10, p3527, 5p |
| Abstrakt: |
Presents a study that investigated the temperature dependence of transport properties of the two-dimensional hole gas at aluminum-gallium-arsenic/gallium arsenide heterostructures grown by molecular-beam epitaxy. Mobilities and sheet carrier concentrations of the two-dimensional hole gas samples; Schematic representation of a valence-band diagram; Discussion regarding photoluminescence measurements. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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