| Autor: |
Ballingall, J. M., Morris, B. J., Leopold, D. J., Rode, D. L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/1986, Vol. 59 Issue 10, p3571, 3p |
| Abstrakt: |
Presents a study that examined silicon dopant compensation in gallium arsenide (GaAs) grown by molecular-beam epitaxy (MBE). Information on the Hall electron-mobility dependence on temperature for MBE silicon-doped GaAs; Comparison between theoretical expressions and experimental measurements of the electron Hall mobility; Process in obtaining photoluminescence spectra. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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