| Autor: |
Gilles, D., Bergholz, W., Schröter, W. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/1986, Vol. 59 Issue 10, p3590, 4p |
| Abstrakt: |
Presents a study that examined the diffusion of manganese in silicon by deep-level transient spectroscopy and the tracer method. Comparison between the diffusion profile of interstitial manganese detected by deep-level transient spectroscopy (DLTS) and the total concentration profile obtained by the tracer method; Concentration profiles for several diffusion temperatures; Example of a typical DLTS spectrum of manganese in n-type silicon. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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