Crystalline film quality in reduced pressure silicon epitaxy at low temperature.

Autor: Nagao, S., Higashitani, K., Akasaka, Y., Nakata, H.
Předmět:
Zdroj: Journal of Applied Physics; 5/15/1985, Vol. 57 Issue 10, p4589, 5p, 4 Black and White Photographs, 3 Diagrams, 3 Graphs
Abstrakt: Studies the influence of deposition pressure on epitaxial crystalline film quality. Details on the experiment; Results of the study; Discussion of findings.
Databáze: Complementary Index