Crystalline film quality in reduced pressure silicon epitaxy at low temperature.
Autor: | Nagao, S., Higashitani, K., Akasaka, Y., Nakata, H. |
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Zdroj: | Journal of Applied Physics; 5/15/1985, Vol. 57 Issue 10, p4589, 5p, 4 Black and White Photographs, 3 Diagrams, 3 Graphs |
Abstrakt: | Studies the influence of deposition pressure on epitaxial crystalline film quality. Details on the experiment; Results of the study; Discussion of findings. |
Databáze: | Complementary Index |
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