| Autor: |
Watkins, S. P., Brake, Darlene M., Haacke, G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/1994, Vol. 75 Issue 6, p2952, 5p, 2 Charts, 6 Graphs |
| Abstrakt: |
Deals with a study which analyzed gallium arsenide epilayers grown by low pressure metalorganic chemical vapor deposition using triethylgallium and tertiarybutylarsine or arsine. Experimental procedures; Growth conditions and electrical properties of gallium arsenide; Photoconductivity effect observed in gallium arsenide. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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