| Autor: |
Hong, M., Mannaerts, J. P., Grober, L., Chu, S. N. G., Luftman, H. S., Choquette, K. D., Freund, R. S. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 3/15/1994, Vol. 75 Issue 6, p3105, 7p, 3 Black and White Photographs, 3 Diagrams, 2 Charts, 2 Graphs |
| Abstrakt: |
Describes the interfacial characteristics of regrown and processed aluminum gallium arsenide using secondary ion mass spectrometry, cross section transmission electron microscopy and reflection high energy electron diffraction. Experimental procedures; Information on film surface morphology after deep etch; Contamination of electron cyclotron resonance plasma; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
