| Autor: |
Mueller, H. H., Wörle, D., Schulz, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/1994, Vol. 75 Issue 6, p2970, 10p, 6 Diagrams, 1 Chart, 3 Graphs |
| Abstrakt: |
Provides information on a study which measured the capture and emission time constants for a set of individual interface traps in different metal-oxide-semiconductor field-effect transistors (MOSFET) by random telegraph signals. Coulomb energy induced by the transfer of a single electron into an interface trap; Details of the experiments; Results and discussion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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