| Autor: |
Jongste, J. F., Loopstra, O. B., Janssen, G. C. A. M., Radelaar, S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/1993, Vol. 73 Issue 6, p2816, 5p, 2 Charts, 4 Graphs |
| Abstrakt: |
Presents a study that investigated the elastic constants and thermal expansion coefficient of C49 TiSi[sub2] thin films through in situ curvature measurement during heat treatment and ex situ x-ray diffraction measurements. Evolution of the stress during the formation of C49 TiSi[sub2]; Characterization of C49 TiSi[sub2] by x-ray diffraction; Typical results for the stress of a C49 TiSi[sub2] layer on silicon and on sapphire as a function of temperature. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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