Deposition and surface characterization of high quality single crystal GaN layers.
| Autor: | Asif Khan, M., Kuznia, J. N., Olson, D. T., Kaplan, R. |
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| Zdroj: | Journal of Applied Physics; 3/15/1993, Vol. 73 Issue 6, p3108, 3p, 2 Black and White Photographs, 1 Graph |
| Abstrakt: | Presents a study which described the surface characterization of high quality gallium nitride layers grown by low pressure metalorganic chemical vapor deposition. Theoretical background; Computational approach; Findings. |
| Databáze: | Complementary Index |
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