| Autor: |
Ekawa, Mitsuru, Yasuda, Kazuhito, Ferid, Touati, Saji, Manabu, Tanaka, Akikazu |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/1992, Vol. 71 Issue 6, p2669, 6p, 8 Graphs |
| Abstrakt: |
Examines the arsenic doping mechanism in cadmium telluride layers grown on gallium arsenide by atmospheric pressure metalorganic vapor phase epitaxy. Ionization energy for the arsenic acceptor; Determination of the background in undoped layers; Cadmium telluride growth kinetics. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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