| Autor: |
Malherbe, J. B., de Witt, B., Berning, G. L. P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/1992, Vol. 71 Issue 6, p2757, 3p, 1 Chart, 2 Graphs |
| Abstrakt: |
Examines the effect of argon[sup+] ion implantation on the electrical characteristics of chromium/p-type silicon Schottky diodes. Significance of high-energy ion implantation of metal-silicon systems; Characteristics for some typical diodes before and after implantation at the indicated dose densities; Schottky parameters at different ion dose densities. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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