Analytic time domain characterization of p-i-n photodiodes: Effects of drift, diffusion, recombination, and absorption.
| Autor: | Lee, JaWoong, Kim, Dae M. |
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| Zdroj: | Journal of Applied Physics; 3/15/1992, Vol. 71 Issue 6, p2950, 9p, 2 Diagrams, 9 Graphs |
| Abstrakt: | Discusses a study which analyzed an analytic impulse response function of high-speed p-i-n photodiodes which is given in direct time domain incorporating the effects of drift, diffusion, recombination and absorption. Method used for describing the excess carrier transport; Use of the photodiodes. |
| Databáze: | Complementary Index |
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