Application of the time-resolved optical-beam-induced current method to the investigation of n-metal-oxide-semiconductor inverters.

Autor: Bergner, H., Hempel, K., Krause, A., Stamm, U.
Předmět:
Zdroj: Journal of Applied Physics; 3/15/1992, Vol. 71 Issue 6, p3010, 9p, 5 Black and White Photographs, 4 Diagrams, 6 Graphs
Abstrakt: Presents a study which demonstrated a pump and probe beam technique in conjunction with the optical-beam-induced current method of laser scanning microscopy. Benefits from the use of laser scanning microscopy; Limitation in the time resolution of the measurement; Basis for the method; Requirements for the development of highly integrated high-speed semiconductor devices.
Databáze: Complementary Index