| Autor: |
Xia, W., Pappert, S. A., Zhu, B., Clawson, A. R., Yu, P. K. L., Lau, S. S., Poker, D. B., White, C. W., Schwarz, S. A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/1992, Vol. 71 Issue 6, p2602, 9p, 1 Black and White Photograph, 9 Graphs |
| Abstrakt: |
Deals with ion mixing of III-V compound semiconductor layered structures. Conventional method to induce compositional disorder in a layered structure; Effect of the subsequent high-temperature annealing step on the device processing flexibility; Ion mixing behavior of semiconductor superlattice structures. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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