Trap creation in silicon dioxide produced by hot electrons.
| Autor: | DiMaria, D. J., Stasiak, J. W. |
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| Zdroj: | Journal of Applied Physics; 3/15/1989, Vol. 65 Issue 6, p2342, 15p |
| Abstrakt: | Examines trap creation in both the bulk of silicon oxide films produced by hot electrons in the oxide. Details of electron heating and transport in silicon oxide; Description of trapping kinetics for bulk negative charging in thick oxides; Comparison of bulk trapped electron builtup for two different oxide thickness. |
| Databáze: | Complementary Index |
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