| Autor: |
Wendt, H., Cerva, H., Lehmann, V., Pamler, W. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/1989, Vol. 65 Issue 6, p2402, 4p |
| Abstrakt: |
Investigates the impact of copper contamination on the quality of silicon oxides. Correlation between gate oxide areas with low breakdown fields located in a pinhole detector with the contaminated areas revealed by Secco defect etching; Relation of the failure mechanism to the formation of copper-rich precipitates at the silicon dioxide/silicon interface; Information on two different mechanisms observed, depending on the in-diffusion temperature. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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