Rutherford backscattering spectroscopy studies of ion transport in anodic oxides of Al/GaAs.

Autor: Teare, S. W., Fischer, C. W.
Předmět:
Zdroj: Journal of Applied Physics; 3/15/1989, Vol. 65 Issue 6, p2479, 6p
Abstrakt: Examines the anodic oxidation of thin aluminum films on gallium arsenide beyond the exhaustion point using Rutherford scattering spectroscopy. Description of the triple-layer structure resulting from continued anodization; Measurement of the thickness and composition of the aluminum/gallium arsenide composite oxides; Discussion of results.
Databáze: Complementary Index