| Autor: |
Guruswamy, S., Rai, R. S., Faber, K. T., Hirth, J. P., Clemans, J. E, McGuigan, S., Thomas, R. N., Mitchel, W. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/1989, Vol. 65 Issue 6, p2508, 5p |
| Abstrakt: |
Examines the role of isovalent dopants in the high-temperature deformation behavior of gallium arsenide. Details of the experimental procedure; Summary of work on both undoped and boron and indium-doped crystals; Results of the solute hardening analysis. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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