Small signal time-of-flight transients.

Autor: Grunwald, H. P.
Předmět:
Zdroj: Journal of Applied Physics; 3/15/1985, Vol. 57 Issue 6, p1985, 5p, 3 Graphs
Abstrakt: Investigates the behavior of a pulse shaped charge disturbance injected into a low-conductivity semiconductor in the presence of traps. Value of the time-of-flight technique in the transport phenomena in semiconductors; Expression for the small signal transient waveform; Overview of the multiple trapping model.
Databáze: Complementary Index