| Autor: |
Raccah, P. M., Garland, J. W., Zhang, Z., Lee, U., Ugur, S., Mioc, S., Ghandi, S. K., Bhat, I. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/1985, Vol. 57 Issue 6, p2014, 4p, 1 Chart, 3 Graphs |
| Abstrakt: |
Reports on the growth and characterization of mercury cadmium telluride (HgCdTe) epilayers grown by metalorganic vapor-phase epitaxy. Existence of interfaces between cadmium telluride (CdTe) and mercury telluride; Summary of the epitaxial growth technique; Mobility versus temperature for an HgCdTe layer grown on a CdTe substrate. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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