| Autor: |
Chin, A. K., Camlibel, I., Caruso, R., Young, M. S. S., Von Neida, A. R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/1985, Vol. 57 Issue 6, p2203, 7p |
| Abstrakt: |
Presents a study which investigated the effects of thermal annealing on semi-insulating undoped gallium arsenide (GaAs) grown by the liquid-encapsulated Czochralski (LEC) technique. Comparison of the cathodoluminiscence (CL) of undoped semi-insulating GaAs grown by the LEC method before and after annealing; Explanation for the improved uniformity of annealed crystals; Examination of the cleaved cross section of crystals annealed in evacuated sealed ampoules. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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