| Autor: |
Gray, M. L., Sargent, L., Blakemore, J. S., Parsey, J. M., Clemans, J. E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/15/1988, Vol. 63 Issue 12, p5689, 5p |
| Abstrakt: |
Focuses on a study which presented spatial distributions of EL2, antisite defect and dominant deep donor, in undoped, semi-insulating gallium arsenide crystals grown by a novel vertical gradient freeze method. Findings on EL2 concentration, distribution, and dislocation density on the crystals; Measurements on axial and radial Hall-effect; Information on thermal activation energies; Discussion on the compensation mechanism. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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