| Autor: |
Vigouroux, J. P., Duraud, J. P., Le Moel, A., Le Gressus, C., Griscom, D. L. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 6/15/1985, Vol. 57 Issue 12, p5139, 6p, 2 Diagrams, 2 Charts, 2 Graphs |
| Abstrakt: |
Presents a study which proposed a mechanism for the creation of negative charge in a thick pure silicon oxide under electron bombardment. Characteristics of trapping charges; Details of the experiment on silicon oxide; Effect of charging on silicon oxide at room temperature; Analysis of the influence of temperature on silicon oxide. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
