Efficiency of photoluminescence and excess carrier confinement in InGaAsP/GaAs structures prepared by metal-organic chemical-vapor deposition.
| Autor: | Diaz, J., Yi, H. J., Erdtmann, M., He, X., Kolev, E., Garbuzov, D., Bigan, E., Razeghi, M. |
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| Zdroj: | Journal of Applied Physics; 7/15/1994, Vol. 76 Issue 2, p700, 5p |
| Abstrakt: | Reports on special double- and separate-confinement InGaAsP/GaAs heterostructures intended for photoluminescence measurements which were grown by low-pressure metal-organic chemical-vapor deposition. Sample and experimental details; Results and discussion. |
| Databáze: | Complementary Index |
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