Electric-field dependence of the photocarrier hopping mobility in bismuth silicon oxide.

Autor: Tayag, Tristan J., Batchman, Theodore E., Sluss, James J.
Předmět:
Zdroj: Journal of Applied Physics; 7/15/1994, Vol. 76 Issue 2, p967, 7p
Abstrakt: Reports on the measurement of the photocarrier mobility of bismuth silicon oxide (BSO) through a time-of-flight technique. Ranges and mobilities of electrons in BSO; Data on the transient current response depicting anomalous transit time dispersion due to hopping; Experimental technique and results.
Databáze: Complementary Index