| Autor: |
Allard, L. B., Aers, G. C., Charbonneau, S., Jackman, T. E., Williams, R. L., Templeton, I. M., Buchanan, M., Stevanovic, D., Almeida, F. J. D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/15/1992, Vol. 72 Issue 2, p422, 7p |
| Abstrakt: |
Presents information on a study which utilized low-temperature photoluminescence (PL) spectroscopy to estimate the compositional disordering induced by gallium focused-ion-beam implantation in a series of strained quantum wells. Patterns of implantation made for each of the five implant doses; Calculation of interdiffusion lengths; Examination of the broad-area-implanted regions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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