Electronic properties of silicon δ-doped InSb.
Autor: | Yang, M. J., Moore, W. J., Wagner, R. J., Waterman, J. R., Yang, C. H., Thompson, P. E., Davis, J. L. |
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Zdroj: | Journal of Applied Physics; 7/15/1992, Vol. 72 Issue 2, p671, 5p, 5 Graphs |
Abstrakt: | Presents a study that investigated magneto-transport and cyclotron resonance of two-dimensional electron gas in silicon under a magnetic field. Details of the experiments; Results and discussion. |
Databáze: | Complementary Index |
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