Electronic properties of silicon δ-doped InSb.

Autor: Yang, M. J., Moore, W. J., Wagner, R. J., Waterman, J. R., Yang, C. H., Thompson, P. E., Davis, J. L.
Předmět:
Zdroj: Journal of Applied Physics; 7/15/1992, Vol. 72 Issue 2, p671, 5p, 5 Graphs
Abstrakt: Presents a study that investigated magneto-transport and cyclotron resonance of two-dimensional electron gas in silicon under a magnetic field. Details of the experiments; Results and discussion.
Databáze: Complementary Index