Formation of the Ni-SiC(001) interface studied by high-resolution ion backscattering.

Autor: Slijkerman, W. F. J., Fischer, A. E. M. J., van der Veen, J. F., Ohdomari, I., Yoshida, S., Misawa, S.
Předmět:
Zdroj: Journal of Applied Physics; 7/15/1989, Vol. 66 Issue 2, p666, 8p
Abstrakt: Presents a study which focused on the reactivity and morphology of ultrathin Ni films deposited on β-SiC in order to determined the initial stages of silicide formation on an atomic scale. Analysis of the composition and morphology of the deposited and reacted films; Determination of the energy of the elastically backscattered ions; Presentation of ion-scattering results.
Databáze: Complementary Index